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. 2017 Nov 13;89(24):13235–13244. doi: 10.1021/acs.analchem.7b03105

Figure 2.

Figure 2

Predicted trapping positions of SWNTs subject to iDEP. (a) SWNT (shown as blue dots) trapping locations predicted by numerical modeling for Re(CM) < 0. The potential applied to this 200 μm long section of the device was adapted to be consistent with 1000 V applied over the entire 1.5 cm long microchannel. The image shows the end position of 1000 SWNTs released from the vertical lines drawn between the columns of posts. SWNTs experienced nDEP and accumulated between two columns of posts where the electric field strength is lowest. (b) SWNT trapping position predicted by numerical modeling for Re(CM) > 0. The applied potential is the same as in panel a. The image shows the end position of 1000 SWNTs (shown as red dots) released from the vertical lines between the columns. SWNTs experienced pDEP and accumulated between consecutive posts in the same row where the electric field strength is highest. The gray-scale color of the fluid-filled part of the device in panels a and b indicates electric field strength.