Table 1.

Physical properties of SnSe single crystals grown by three different methods

Batches	Flux cooling rate	SnSe2 ratioa	Se:Sn	n (1018 cm−3)		Resistivity (Ω mm)
				SdHb	HallRT	2 K	275 K
SF1	Fast cooling	0.9%	1	0.825	1.16	0.0746	0.360
SF3	3 days to 673 K	<0.3%	1	0.502	0.592	0.136	0.757
SF6	Fast cooling	0.3%	1	0.704	0.69	0.162	0.812
SF7	Fast cooling	3.73%	1	0.836	1.23	0.0776	0.333
SF11	Fast cooling	2.6%	1	0.480	1.079	0.0604	0.333
SF12	Fast cooling	<0.3%	0.95	0.472	0.794	0.191	0.457
BR1	Fast cooling	2.49%	1	0.423	0.699	0.113	0.525
BR2c	Fast cooling	0.5–1.5%	1	0.395	0.591	0.198	0.436
SF8	7 days to 673 K	<0.1%	1	—	—	—	26.4
SF5d	3 days to 673 K	None	1	—	—	—	8303
SF10d	Fast cooling	<0.1%	1	—	—	36.74	6.93
PVD	—	None	1	—	—	—	137760

^a Coverage of SnSe₂ after exfoliating surface layers. Statistics by ×500 optical microscope

^b n _sdh is calculated by $\frac{2k_{\mathrm{SdH}}^3}{3{\pi }^2}$, assuming spherical FSs. A factor of two is multiplied to reflect the double valley transport

^c Crystal dependent. SnSe₂ microdomains thinner than 5 MLs are not distinguishable under optical microscopy

^d Sn and Se are ground and thoroughly mixed before the growth