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. 2018 Jan 10;13:8. doi: 10.1186/s11671-017-2419-8

Fig. 10.

Fig. 10

a Experimental and b simulated transient responses of a HfOx RRAM device to the  2.3 V 50 ns input pulses. The experimental result is reported elsewhere [144] and included here in a for convenience. c In a larger time range, the simulated transient response for the same device including the gap size and temperature is shown. Current compliance set at 200 μA in simulation [78]