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. 2018 Jan 10;13:8. doi: 10.1186/s11671-017-2419-8

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© The Author(s). 2018

Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Fig. 20 — Theoretical i-v curves for a memristor with (realistic) dopant drift modeled by window functions F_p(x) = (1 − (2x − 1))^2p considering p = 1 (red solid) and p = 10 (green dashed). An external voltage v(t) = 2v₀ sin(ω₀t/2) is applied. The memristor parameters are w₀/D = 0.5 and R_OFF/R_ON = 50. The memristive behavior at p = 10 has been enhanced. The slope of the i-v curve at a small time period is the same, R₀⁻¹, in both cases whereas the slope on return sweep depends on the window function. For a large p value, the return-sweep slope is R_ON⁻¹ = 1> > R₀⁻¹, corresponding to a fully doped memristor [94]