Figure - PMC

Skip to main content

An official website of the United States government

Here's how you know

Here's how you know

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

View full-text article in PMC

. 2018 Jan 10;13:8. doi: 10.1186/s11671-017-2419-8

Search in PMC
Search in PubMed
View in NLM Catalog
Add to search

© The Author(s). 2018

Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

PMC Copyright notice

Fig. 3 — Simulated voltage-driven memristive device. a Simulation with dynamic negative differential resistance. b Simulation with no dynamic negative differential resistance. c Simulation governed by nonlinear ionic drift. In the upper plots of a, b, and c, the voltage stimulus (blue) and the corresponding change in the normalized state variable w/D (red) is plotted against time. In all cases, hard switching occurs when w/D closely approaches the boundaries at zero and one (dashed), and the qualitatively different i-v hysteresis shapes are due to the specific dependence of w/D on the electric field near the boundaries. d For comparison, an experimental i–v plot of a Pt–TiO_2 − x–Pt device is presented [3]