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. 2018 Jan 15;9:199. doi: 10.1038/s41467-017-02631-9

Fig. 1.

Fig. 1

Crystal structure of undoped and Nb-doped bulk MoS2. a Illustration of modification in stacking order polytypism of MoS2 by Nb doping (top and side views). The dashed lines show the corresponding single unit cells of 2H and 3R structures. b Calculated energy difference of 3R phase with respect to 2H phase, with positive (negative) values indicating that the 2H (3R) phase is more stable. Bilayer MoS2 system is considered for variable Nb doping concentrations (not to the scale). For the MoS2:Nb, Ⓐ and Ⓑ are obtained with a 6 × 6 supercell by adding 1 and 2 Nb dopants, respectively. Type Ⓒ is calculated by substituting a Nb dopant into a 4 × 4 supercell. So, their Nb doping concentrations correspond to 1.4, 2.8 and 3.1%, respectively. c Convergent beam electron diffraction patterns obtained from the undoped and Nb-doped multilayer MoS2 at [0001] incidence. Both bulk crystals display mirror symmetries, indicated by yellow and blue lines, for the six-fold (MoS2, 2H) and three-fold (MoS2:Nb, 3R), respectively. d Optical reflectance spectrum of bulk MoS2 and MoS2:Nb taken at 4.5 K. Two main peaks are assigned as A and B exciton transitions at the K point while the additional feature arising from H-point of the Brillouin zone is only observed in undoped MoS2. The strong absorption below the A exciton in MoS2:Nb is evidenced by the absence of the Fabry-Perot oscillation which appears in the Nb-free crystal