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. 2018 Jan 16;8:861. doi: 10.1038/s41598-017-19129-5

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) I-V and corresponding ln(J)-V (inset) curves of the 2 nm-thick junction at different temperatures at zero magnetic field (temperatures from 10 K to 230 K every 10 K are represented). (b) ln(J)-V slope of the 2 nm-thick junction I-V curves as a function of temperature at zero field (red) and under 9 T OOP (black). (c) ln(J/V²)-V⁻¹ plot from the curve at 10 K (from panel (a)) to determine the tunneling transport mechanism. The straight slope in the high voltage region indicates Fowler-Nordheim tunneling. (d) Schematics of the band diagram of our experimental configuration with forward applied bias. Φ₀ is the tunneling barrier and splits into Φ_↑ and Φ_↓. In the zoom Δ is the exchange splitting and Φ_H is the additional splitting under an applied magnetic field.