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. 2018 Jan 16;8:861. doi: 10.1038/s41598-017-19129-5

Figure 3.

Figure 3

(a) Resistance versus field of a 200 μm2 junction of Pt/2 nm-LCMO/Nb:STO with the field applied perpendicular and parallel to the sample at 10 K and V = 850 mV. (b) Fitting of J(H) to the two-current model extracted from measurements in (a) OOP field in main panel and IP field in the inset.