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. 2018 Jan 22;9:308. doi: 10.1038/s41467-017-02508-x

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 6 — Raman response of Si for pulsed laser excitation. a Raman spectrum of Si measured for ultrafast laser excitation and 6.6 mW average power. (blue line) Lorentzian fit. (red line) laser bandwidth deconvoluted spectrum. b FWHM(Si) as a function of P_L (blue symbols) does not show any deviation from the CW FWHM(Si) (dashed blue line). FWHM(G) under the same excitation conditions (black symbols) deviates from the CW regime (dashed black line). Error bars represent the 95% confidence level of the best fit of the Si (a) and SLG (G band) peaks