Table 1.
Substrate material, film thickness (d), nanowire linewidth (w), space (s), switching current (Isw), switching current density (Jsw), and minimum hotspot relaxation time (τth)min for the seven SNSPDs.
| Sample | Substrate material | d (nm) | w (nm) | s (nm) | Isw (μA) | Jsw (MA/cm2) | (τth)min (ps) |
|---|---|---|---|---|---|---|---|
| #1 | MgO (100) | 5.5 | 90 | 110 | 33 | 6.7 | 11.6 ± 0.1 |
| #2 | MgO (100) | 5.5 | 105 | 110 | 40 | 6.9 | 12.2 ± 0.1 |
| #3 | MgO (100) | 5.5 | 120 | 110 | 51.5 | 7.8 | 12.6 ± 0.1 |
| #4 | MgF2 (110) | 4.5 | 90 | 110 | 22 | 5.4 | 19.7 ± 0.1 |
| #5 | Al2O3 (0001) | 7 | 130 | 70 | 21.5 | 2.4 | 22.5 ± 0.7 |
| #6 | SiO2/Si (100) | 7 | 90 | 110 | 21 | 3.3 | 22.7 ± 0.1 |
| #7 | Si (100) | 7.5 | 90 | 110 | 19 | 2.8 | 34.5 ± 0.3 |