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. 2018 Jan 24;8:1486. doi: 10.1038/s41598-018-20035-7

Table 2.

Critical temperature (Tc), normal resistivity (ρn), upper critical field [Hc2(0)], Ginzburg–Landau coherence length (ξGL), electron diffusion coefficient (D), mean electronic free path (l), and Ioffe–Regel parameter (kFl) for the 5.5-nm-thick NbN/MgO (100) and 7-nm-thick NbN/SiO2/Si (100) samples.

Substrate material d (nm) Tc (K) ρn (μΩ cm) μ0Hc2 (0) (T) ξGL (nm) D (cm2/s) l (Å) k F l
MgO (100) 5.5 13.51 154 11.17 5.43 0.92 3.56 5.31
SiO2/Si (100) 7 7.71 562 12.56 5.12 0.47 1.08 1.53