Figure 2.

(a) MS signals recorded during leaking of H₂O onto a film of MeCpPtMe₃ with thickness corresponding to 30 monolayers deposited on a Ta substrate held at 105 K. The amount of H₂O vapour applied in this experiment was the same as that used for depositing the MeCpPtMe₃ multilayer film. The m/z ratios 18, 16, and 15 were recorded to monitor leaking of H₂O as well as possible formation of CH₄. For CH₄, the relative intensity of the m/z ratios 16 and 15 amounts to 1:0.9 [10]. (b) TDS experiment performed subsequently on the same sample. Here, m/z 39 (C₃H₃⁺) is also included as a characteristic MS signal of MeCpPtMe₃ (see [11]).