MS signals recorded during repeated electron exposures (e−) and leaking of H2O (H2O dosed) onto a 30 layer film of MeCpPtMe3 deposited and held at 105 K. During the first H2O leaking, the amount of vapour was 50% of that used for depositing the MeCpPtMe3 multilayer film. For the second leaking, the amount of H2O vapour was increased by a factor of two. During the three electron irradiation periods, exposures of 1.04 mC/cm2 (start at 130 s, Ip = 17 µA/cm2), 20 mC/cm2 (start at 750 s, Ip = 22 µA/cm2), and 14 mC/cm2 (start at 1900 s, Ip = 22 µA/cm2) were applied at E0 = 31 eV. A lower E0 as compared to Figure 3 was applied here to degrade the layers more slowly and consequently achieve better control over the number of injected electrons. The m/z ratios 18, 16, 15, and 28 were recorded to monitor leaking of H2O as well as possible formation of CH4 (relative intensity of m/z ratios 16 and 15 amounts to 1:0.9 [10]) and CO. Note that m/z 16 also contains a minor fragment signal of H2O.