Figure 2.

(a) Schematic diagram for resistances to compose Gr/MoS₂/(Cr/Au) vertical field-effect transistor (VFET) with 50 nm-thick MoS₂. (b) Vertical Resistance (R_vert) as a function of the back-gate voltage (V_bg) for Gr/MoS₂/(Cr/Au) VFET with 50 nm-thick MoS₂. (c) Planar resistance (R_planar) as a function of V_bg for the lateral MoS₂ field-effect transistor with 48 nm-thick MoS₂. (d) Dependence of ${\mathsf{\rho }}_{\mathrm{planar}}$ and ${\mathsf{\rho }}_{\mathrm{vert}}$ on the thickness of MoS₂ channels at V_bg = −10 V.