Figure - PMC

Skip to main content

An official website of the United States government

Here's how you know

Here's how you know

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

View full-text article in PMC

. 2017 Dec 28;8(1):14. doi: 10.3390/nano8010014

Search in PMC
Search in PubMed
View in NLM Catalog
Add to search

© 2017 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

PMC Copyright notice

(a) Schematic diagram of the resistances to compose (Cr/Au)/MoS₂/(Cr/Au) vertical field-effect transistor (VFET). The thickness of MoS₂ is 48 nm. (b) R_vert as a function of V_bg for (Cr/Au)/MoS₂/(Cr/Au) VEFT. Inset: A scanning electron microscope image of the device. While the constant current of 1 μA is applied between 1 and 4, voltage is measured between 2 and 3. (c) I-V characteristics at different V_bg’s.

(a) Schematic diagram of the resistances to compose (Cr/Au)/MoS₂/(Cr/Au) vertical field-effect transistor (VFET). The thickness of MoS₂ is 48 nm. (b) R_vert as a function of V_bg for (Cr/Au)/MoS₂/(Cr/Au) VEFT. Inset: A scanning electron microscope image of the device. While the constant current of 1 μA is applied between 1 and 4, voltage is measured between 2 and 3. (c) I-V characteristics at different V_bg’s.