Figure 5.

GQDs-based photodetectors. (a) Schematic illustration of the configuration for photoconductive measurements of GQDs with asymmetric electrodes. (b) Time response of the device under pulsed 254 or 302 nm DUV light (42 μW cm⁻²). Reproduced with permission from [63]. Copyright 2015, American Chemical Society. (c) Schematic of the energy level alignment for the photodoping effect. (d) Photoresponsivity vs. optical irradiation power (laser wavelengths of 254–940 nm) for the DAN-GQD/BN-NS@GFET hybrid PD. Reproduced with permission from [54]. Copyright 2016, Royal Society of Chemistry. (e) Schematic representation of the NMe₂-GQD@GFET hybrid PD. PEN stands for polyethylene naphthalate (f) Spectral response (left axis) from the NMe₂-GQD@GFET PD (V _SD = 0.1 V, V _G = 0 V, 0.06 μW cm⁻²). The solid orange area (right axis) represents the UV–vis absorption spectrum of a NMe₂-GQD solution. Reproduced with permission from [64]. Copyright 2017, Macmillan Publishers Limited.