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. 2018 Jan 31;19(1):76–100. doi: 10.1080/14686996.2017.1422224

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© 2018 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis

This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Figure 6. — GQDs-based organic photovoltaic devices. (a) J–V characteristics of the devices based on aniline (ANI) and GQDs with different GQDs content and on aniline and graphene sheets (GSs, under optimized conditions) annealed at 160 °C for 10 min, under AM 1.5G 100 mW illumination. Reproduced with permission from [67]. Copyright 2011, American Chemical Society. (b) Schematics of the ITO/PEDOT:PSS/P3HT:GQDs/Al device containing indium tin oxide (ITO), poly(ethylene dioxythiophene)–polystyrene sulfonic acid (PEDOT:PSS) and poly(3-hexylthiophene-2,5-diyl) (P3HT). (c) J–V characteristic curves for the ITO/PEDOT:PSS/P3HT/Al, ITO/PEDOT:PSS/P3HT:GQDs/Al and ITO/PEDOT:PSS/P3HT:GQDs/Al devices after annealing at 140 °C for 10 min. Reproduced with permission from [68]. Copyright 2011, Wiley-VCH.