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. 2018 Feb 8;9:564. doi: 10.1038/s41467-018-02999-2

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — III-nitride nanobeam cavity membrane. a Schematic drawing of a freestanding nanobeam structure featuring a single InGaN/GaN QW. It consists of two photonic crystal mirrors tapered down to the cavity (not drawn to scale for clarity). b Field intensity profile |E_y|² of the fundamental cavity mode as obtained via 3D-FDTD simulations. c, d Top and side-view scanning electron microscope images of typical nanobeam structures, where the III-nitride layer, the airgap, and the silicon underneath (false-color in d) are noticeable. The scale bar in c is equal to 100 nm in length