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. 2018 Feb 16;8:3204. doi: 10.1038/s41598-018-21420-y

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Electrical characteristics of the back-gated InAs NWFETs. (a) Output (I_DS-V_DS) and (b) transfer (I_DS-V_BG) characteristics of the InAs NWFET with a channel length of ~7.4 μm and a total NW width of ~130 nm. The right axis in (a) shows I_DS normalized by the total NW width. (c) Field-effect mobility vs. V_BG, calculated at V_DS = 0.1 V for the same device. (d) The I_DS–V_DS data of the InAs NWFET with a channel length of high density NW bundles of ~2.5 μm, comprising ~25 NWs.