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. 2018 Feb 19;9:713. doi: 10.1038/s41467-018-03188-x

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — The vsWC-PC structure. a Schematic of the 1D PC with a monolayer TMD placed on top. The SiN PC has multiple design parameters, including the period Λ, filling factor η, total thickness t, and the grating thickness h. The SiO₂ capping layer has a thickness of d. b The TE-polarized electric-field profile of the PC in the y−z plane. The white lines mark the outline of the PC. The red line marks the position of the monolayer TMDs. c A side-view SEM image of the bare PC. d A top-view SEM image of the TMD laid on top of a PC