| Energy (wavelength) range |
1.8–20 keV (0.6–6.5 Å) |
0.5–10 keV (1.2–24 Å) |
| Photon source |
In-vacuum undulator |
Temporary long-period undulator |
| Monochromator |
Double-crystal monochromator with Si (111), InSb (111) crystals. Multi-layer mirrors (ML) |
Double-crystal monochromator with Si (111), InSb (111) crystals. Multi-layer mirrors (ML) |
| Photons pulse−1 (1% bandwidth)−1
|
>1 × 107 below 10 keV |
>3 × 105 below 4 keV; >1 × 105 below 9 keV |
| Repetition rate |
100 Hz |
2 Hz |
| Harmonic content |
<10−3
|
<10−3
|
| Bandwidth |
Si: ΔE/E ≃ 2 × 10−4 (2.5–20 keV) |
Si: ΔE/E ≃ 2 × 10−4 (2.5–20 keV) |
| |
InSb: ΔE/E ≃ 4 × 10−4 (1.8–20 keV) |
InSb: ΔE/E ≃ 4 × 10−4 (1.8–20 keV) |
| |
ML: ΔE/E = 0.01 (1.8–20 keV) |
ML: ΔE/E = 0.01 (1.8–20 keV) |
| Monochomator throughput at 5 keV |
>70% crystal; >50% ML |
>70% crystal; >50% ML |
| Optics |
Unfocused/rhodium-coated Si mirror, Be lenses, harmonic rejection mirror, X-ray prism |
Unfocused/rhodium-coated Si mirror, Be lenses, harmonic rejection mirror, X-ray prism |
| Polarization |
Linear |
Linear |
| Pulse duration |
<100 fs (FWHM) |
<400 fs (FWHM, measured) |
| Synchronization |
<1 ps (RMS) |
<1 ps (90% of pulses within 1 ps window) |
| |
|
30 fs (RMS) measured between laser and RF |
| Spot size on sample (H × V) (FWHM) |
0.1 mm × 0.1 mm mirror |
0.08 mm × 0.16 mm mirror |
| |
100 µm × 15 µm mirror + Be lens |
|
| Equipment |
Ultrafast laser (10 mJ at 800 nm), four-circle goniometer, CCD detector, Pilatus detector, X-ray sCMOS 16 M detector |
Ultrafast laser <50 fs (10 mJ at 800 nm; 0.1 mJ at 2600 nm and 530 nm), four-circle goniometer, CCD detector |
