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. 2018 Mar 2;9:919. doi: 10.1038/s41467-018-03436-0

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — Electrical transport characterization of 13.5 nm thick PtSe₂. a Gating characteristics showing weak current modulation at different temperatures. b I_ds − V_ds curves acquired at different temperatures. c Contact resistance extraction using the transfer length method for the 13.5 and 7 nm thick devices