Fig. 1.

Experimental phonon dispersions of silicon. Inelastic neutron scattering data of silicon were measured on the ARCS time-of-flight spectrometer at (A) 100 K, (B) 200 K, (C) 300 K, (D) 900 K, (E) 1,200 K, and (F) 1,500 K. The 4D phonon dynamical structure factors, S(q,$\epsilon$), were reduced, multiphonon-subtracted, and “folded” into one irreducible wedge in the first Brillouin zone. Phonon dispersions are shown along high-symmetry lines and through the zone L–X.