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. 2018 Feb 12;115(9):1986–1991. doi: 10.1073/pnas.1717217115

Fig. 5.

Fig. 5.

Resistance evolution based on the analytic model. (A and B) Linear correlations between R and η2/NCNT in both x and z directions are shown based on the CGMS simulation results. The simulation results are for NCNT=135 CNTs with length lCNT=2,400nm and diameter dCNT=1nm, each discretized by Nnode=120 nodes, in a simulation cell with Hx=Hz=1,200nm. The dashed lines are fitting curves R=0.125Rcontactη2/NCNT. (C and D) Analytic results of the evolution of the relative change of resistances ΔRx/Rx0 and ΔRz/Rz0 under three sequentially increasing strain cycles of 20, 40, and 60% based on Eqs. 14. The analytic results are for NCNT=135 CNTs corresponding to the CGMS simulation in Fig. 2 C and D.