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. 2018 Feb 10;18(2):543. doi: 10.3390/s18020543

Figure 6.

Figure 6

(a) Calculated THz photoresponse of the strained-Si MODFET in the photovoltaic mode (Ids-off) and for two values of the source-to-drain bias current (Ids = 0.1 and 1 µA/µm); (b) variation of the gate-to-source and gate-to-drain capacitance vs. Vds for three different values of the gate bias −0.3, −0.6, and −1 V).