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. 2018 Feb 10;18(2):543. doi: 10.3390/s18020543

Figure 8.

Figure 8

(a) Experimental THz photoresponse of the strained-Si MODFET in the photovoltaic mode (Ids-off) and for two values of the bias source-to-drain current (Ids = 2.5 μA, Ids = 5 μA) under an excitation of 150 GHz; (b) same as (a) under an excitation of 300 GHz.