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. 2018 Mar 16;8:4710. doi: 10.1038/s41598-018-22983-6

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Temperature dependence of the resistivity for selected Nb films, with a thickness ranging from 9 nm to 80 nm. Inset: width of the plateau region (ΔT), above T_C, as a function of d (circles). As ΔT we have considered the T interval corresponding to a film resistivity change of ±2.5% of ρ(T) @ 10 K. Squares: resistivity ratio at T = 300 K and at T = 10 K as a function of d. All films have been deposited on SiO₂ substrates except those, shown by yellow filled symbols, deposited on sapphire.