Table 1.
The experimentally measured properties of different Nb nanofilms.
| Sample | Thickness (nm) | width (μm) | TC (K) | ΔTC (mK) | ρ300 (μΩ cm) | RRR (ρ300/ρ10) | (T) | ξ(0) (nm) |
|---|---|---|---|---|---|---|---|---|
| #9 | 9 | 50 | 6.462 | 50 | 118.2 | 1.827 | — | — |
| #17 | 11 | 50 | 6.53 | 65 | 97.8 | 2.00 | — | — |
| #12 | 12 | 50 | 6.475 | 30 | 135.7 | 1.893 | — | — |
| #16 | 13 | 50 | 6.84 | 19 | 84.9 | 2.208 | — | — |
| #H15 | 13.5 | 10 | 6.631 | 79 | 70.19 | 1.889 | — | — |
| #H14S | 13.5 | 10 | 7.313 | 75 | — | — | — | — |
| #H1S | 19.5 | 10 | 7.91 | 35 | 31.0 | 2.563 | — | — |
| #H1 | 19.5 | 10 | 7.72 | 55 | 20.7 | 2.367 | 4.4 ± 0.10 | 7.77 ± 0.14 |
| #H5 | 19.5 | 10 | 7.48 | 49 | 35.8 | 2.165 | — | — |
| #H2 | 20.5 | 10 | 7.830 | 42 | 42.3 | 2.272 | — | — |
| #H11S | 22.5 | 10 | 8.108 | 28 | 28.4 | 3.191 | — | — |
| #H9 | 22.5 | 10 | 7.888 | 44 | 30.1 | 2.675 | — | — |
| #7 | 25 | 50 | 8.399 | 15 | 25.6 | 2.774 | — | — |
| #H13 | 28 | 10 | 8.51 | 28 | 25.8 | 3.049 | — | — |
| #H7 | 28 | 10 | 7.967 | 65 | 30.4 | 2.522 | — | — |
| #H8 | 33 | 10 | 8.505 | 40 | 36.3 | 2.524 | 2.30 ± 0.03 | 11.3 ± 0.20 |
| #3 | 34 | 50 | 8.585 | 16 | 21.1 | 3.186 | — | — |
| #H6 | 35 | 10 | 8.519 | 29 | 20.9 | 3.432 | — | — |
| #4 | 48 | 10 | 8.970 | 16 | 67.2 | 4.324 | — | — |
| #H3 | 50 | 10 | 8.630 | 20 | 21.1 | 3.074 | — | — |
| #5 | 62 | 50 | 8.927 | 10 | 57.9 | 4.103 | — | — |
| #6 | 80 | 50 | 9.133 | 11 | 20.7 | 4.917 | — | — |
| #H12 | 92 | 10 | — | — | — | — | 2.12 ± 0.016 | 11.5 ± 0.10 |
From left to right: Sample name (an S, following the number, indicates deposition on a sapphire substrate); Film thickness; width of the sample used for the electrical characterisation; TC; Superconducting transition width, ΔTC; Resistivity at 300 K; Resistivity ratio (RR) at 300 K and 10 K; Perpendicular critical magnetic field at 0 K; coherence length in the film plane at 0 K. For resistivity measurements, 1 μA of current intensity has been sourced to all films but #7 (50 μA); #5 (10 μA and 50 μA) and #6 (50 μA).