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. 2018 Mar 19;8:5015. doi: 10.1038/s41598-018-23156-1

Figure 1.

Figure 1

Stable rhombohedral stacking with almost pure GST124 on substrate miscut. (a) Raman spectra of 70 nm-thick GST grown on Si (111) with β = 0.03° at RT (black), β = 4° at RT (red) and β = 4° at 10 K (dark red). (b) Intensity ratio of the second order XRD for the VL peak and GST peak (IVL/IGST) as a function of the Raman shift for the A1(1) (full squares) and A1(2) (empty squares) modes with β = 0.03° (black), 3° (green), 4° (red) and 6° (blue). Dashed and solid lines serve as a guide to the eye. The top and bottom right panels show the Raman shift of the A1(1) and A1(2) modes, respectively. (c) 70 nm- (red) or 7 nm- (light blue) thick GST grown on Si (111) with β = 4°.