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. 2018 Feb 27;11(3):345. doi: 10.3390/ma11030345

Figure 1.

Figure 1

(a) Schematic illustration of a graphene monolayer (black) embedded by two (n)-a-Si:H layers (the top layer is the emitter and the bottom layer is the collector). Forward-bias output characteristics of the (b) BC (base-collector) and (c) BE (base-emitter) interfacial diodes. Insets: Forward and backward bias of the (b) BC and (c) BE diodes.