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. Author manuscript; available in PMC: 2018 May 25.
Published in final edited form as: Adv Funct Mater. 2017 Mar 23;27(20):1606506. doi: 10.1002/adfm.201606506

Figure 3.

Figure 3

(a) Schematic of proposed sensing mechanism of the extended solution gate device. (b) Representative drain current changes of anti-GFAP modified extended solution gate devices on exposure to 100 ng/mL GFAP in 0.05X PBS. PS-MA films were mixed with different molecular weight PEGs. Gate voltage (Vg) and drain voltage (Vd)were set to -2 V relative to the source voltage(Vs).