Figure 12.

Field dependence of the ΔZ/Z ratio for thin film FeNi/Cu-based MI sensitive element measured either without gel/ferrogel or in the presence of gel (a) f = 150 MHz; (b) f = 300 MHz. Dashed lines (Inset (a)) show the difference between the MI element itself and the MI element covered by FG-I-1. P-polymer flexible substrate, numbers in the description of the multilayered structure are layer thicknesses. Inset (b) shows the difference in the field of 8 Oe between ΔZ/Z value for FG-II-9. All units for the layer thicknesses are nanometers.