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. 2018 Apr 4;8:5640. doi: 10.1038/s41598-018-24018-6

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) Dark field TEM image of sample A shows the defective GeSn (1^st layer) and low defect GeSn (2^nd layer), respectively. (b) SIMS of sample A indicates the spontaneous Sn gradient GeSn at both layers with different gradient rates. The 1^st layer was subdivided into region-I and II with boundary of critical thickness h_c. (c) In TEM Image of sample D, an additional GeSn (3^rd layer) is shown on top of two-layer structure. One bright line travels across the 2^nd and 3^rd layer indicates the penetration of threading dislocation. (d) SIMS of sample D shows the 3^rd layer with up to 17. 5% Sn content. (e) For TEM image of sample E, the boundaries between each Sn-enhanced step are indistinguishable in the 2^nd layer. (f) In SIMS of sample E, Sn incorporation increases continuously in the 2^nd layer. The Maximum Sn content of 22. 3% was achieved.