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. 2018 Apr 4;8:5640. doi: 10.1038/s41598-018-24018-6

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) Plots of Gibbs free energy ΔG₀ = 0 and ΔG_s = 0 correspond to the stability boundary of fully relaxed and compressively strained GeSn system, respectively. The grey and purple zone marked in the plots represent the stable (ΔG > 0) and unstable (ΔG > 0) region. Under compressive strain, stability boundary (ΔG_s = 0) shifts to lower Sn composition, shrinking the stable region. At T = 400 °C, the maximum Sn composition for strained and unstrained system is 2.5% and 3%, respectively. (b) Gibbs free energy plot at T = 400 °C with (G_s) and without strain (G₀). The local minimum Sn contents for strained system and unstrained system occur at 0.9% and 1.1%, respectively.