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. 2017 Dec 1;9(5):1213–1220. doi: 10.1039/c7sc04464j

Table 2. Device performance with 1 and 2 as emitters a .

Device a V turn-on a [V] CIE1931 b [x, y] EQEmax c [%] CEmax d [cd A–1] PEmax e [lm W–1] L max f [cd m–2] Device performance at 1000 cd m–2
EQE [%] CE [cd A–1] PE [lm W –1]
1 (7%) in CBZ2-F1 3.4 (0.25, 0.42) 4.1 11.77 10.38 10 876 2.7 7.68 4.31
1 (7%) in TBCPF 3.7 (0.25, 0.41) 5.3 14.54 12.34 4715 2.8 7.63 3.47
2 (2%) in CBZ2-F1 3.5 (0.18, 0.16) 8.0 9.97 8.95 8101 4.2 5.21 2.60
2 (6%) in CBZ2-F1 3.4 (0.18, 0.17) 6.0 7.77 6.46 14 143 4.2 5.42 2.54

aTurn on voltage at a brightness of 1 cd m–2.

b1 mA cm–2.

cExternal quantum efficiency.

dMaximum current efficiency.

eMaximum power efficiency.

fMaximum luminance.