Table 2. Device performance with 1 and 2 as emitters a .
Device a | V turn-on a [V] | CIE1931 b [x, y] | EQEmax c [%] | CEmax d [cd A–1] | PEmax e [lm W–1] | L max f [cd m–2] | Device performance at 1000 cd m–2 |
||
EQE [%] | CE [cd A–1] | PE [lm W –1] | |||||||
1 (7%) in CBZ2-F1 | 3.4 | (0.25, 0.42) | 4.1 | 11.77 | 10.38 | 10 876 | 2.7 | 7.68 | 4.31 |
1 (7%) in TBCPF | 3.7 | (0.25, 0.41) | 5.3 | 14.54 | 12.34 | 4715 | 2.8 | 7.63 | 3.47 |
2 (2%) in CBZ2-F1 | 3.5 | (0.18, 0.16) | 8.0 | 9.97 | 8.95 | 8101 | 4.2 | 5.21 | 2.60 |
2 (6%) in CBZ2-F1 | 3.4 | (0.18, 0.17) | 6.0 | 7.77 | 6.46 | 14 143 | 4.2 | 5.42 | 2.54 |
aTurn on voltage at a brightness of 1 cd m–2.
b1 mA cm–2.
cExternal quantum efficiency.
dMaximum current efficiency.
eMaximum power efficiency.
fMaximum luminance.