Skip to main content

View full-text article in PMC

. 2017 Dec 13;9(5):1385–1391. doi: 10.1039/c7sc04669c

Table 2. The characteristic data of the doped devices (A–D).

Device	V _on ^a [V]	LE_max [cd m^–2]	EQE ^b [%]	CE ^b [cd A^–1]	PE ^b [lm W^–1]	Peak [nm]	CIE [x, y]
A	3.0	33 586	13.0/12.9/10.0	45.0/44.9/34.6	39.9/35.9/18.7	532	(0.34, 0.60)
B	3.4	31 099	22.4/21.6/12.5	80.3/77.9/44.8	64.1/53.3/20.4	536	(0.35, 0.59)
C	3.1	30 039	11.1/11.0/10.1	29.1/28.8/26.6	23.4/20.8/12.9	572	(0.49, 0.50)
D	3.4	25 375	14.1/13.9/11.1	36.1/35.3/28.4	28.1/22.9/12.4	572	(0.50, 0.49)

^aAt a luminance of 1 cd m^–2.

^bThe maximum value and the corresponding values at a brightness of 100 and 1000 cd m^–2, respectively.