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. 2017 Dec 13;9(5):1385–1391. doi: 10.1039/c7sc04669c

Table 3. The characteristic data of the non-doped devices (E–H).

Device	V _on ^a [V]	LE_max [cd m^–2]	EQE ^b [%]	CE ^b [cd A^–1]	PE ^b [lm W^–1]	Peak [nm]	CIE [x, y]
E	2.8	14 578	10.1/9.7/6.0	35.4/33.4/21.2	32.7/26.2/10.7	544	(0.39, 0.58)
F	2.6	29 843	12.0/11.9/8.3	41.2/40.4/28.5	45.4/36.7/17.6	548	(0.40, 0.57)
G	2.4	21 050	5.6/5.6/5.2	10.5/10.5/9.8	12.0/8.2/5.2	608	(0.56, 0.43)
H	2.8	13 167	5.3/5.2/4.4	7.5/7.4/6.2	6.2/5.3/2.9	616	(0.60, 0.40)

^aAt a luminance of 1 cd m^–2.

^bThe maximum value and the corresponding values at a brightness of 100 and 1000 cd m^–2, respectively.