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. Author manuscript; available in PMC: 2018 Apr 11.
Published in final edited form as: ACS Nano. 2017 Jul 7;11(7):7494–7507. doi: 10.1021/acsnano.7b04031

Figure 2.

Figure 2

Characterization of fabricated antidot arrays in few-layer BP. (a) Optical image of columnar regions with (1) pristine few-layer BP, (2) patterned antidots (SC = 60 nm and R = 23 nm), (3) PxOy, (4) bare SiO2/Si substrate, and (5) pristine few-layer BP. (b) Raman spectra of (1) pristine few-layer, (2) antidot, and (3) PxOy regions normalized to the Ag1 peak of (1), showing suppression of the in-plane modes (B2g and Ag1) in the antidot region. (c) SEM image of a square antidot array with SC = 65 nm and R = 13 nm. (d) B2g:Ag1 intensity Raman map from the sample in (a). Note: SC is the average in-plane superlattice constant and R is the average antidot radius.