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. 2018 Apr 18;8:85. doi: 10.1038/s41398-018-0132-8

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Bright field images of WT and Df(16)A^+/− cortical neurons co-cultured with astrocytes at DIV7 and DIV14. Scale bar = 50 µm. b Quantitative data of resting membrane potential (RMP) measured in WT and Df(16)A^+/− cortical neurons at DIV7 and DIV14, respectively. There was no significant difference between genotypes at both time points. c Quantitative data of cell capacitance (C_p) in WT and Df(16)A^+/− cortical neurons at DIV7 and DIV14, respectively. There was no significant difference between genotypes at both time points. d Quantitative data of input resistance (R_in) in WT and Df(16)A^+/− cortical neurons at DIV7 and DIV14, respectively. Df(16)A^+/− cortical neurons showed significant higher R_in than that of WT neurons at DIV7 (t test, *p < 0.05). e Quantitative data of voltage sags caused by HCN-mediated currents in WT and Df(16)A^+/− cortical neurons at DIV7 and DIV14, respectively. There was no significant difference between genotypes at both time points. f Sample traces of HCN-caused voltage sags in WT and Df(16)A^+/− cortical neurons at DIV7. In the presence of HCN-mediated currents, a negative current step (hyperpolarizing the cell membrane to −150 mV) induced a depolarizing voltage sag (arrows, left panel)