Table 1.

Comparison of HBT/HET device performance and properties between this work and other reported devices based on 2D materials

	Emitter	base	J C [cm−2]	β	α
UCLA36	Si/SiO2	MoS2	≈1 µA	4	0.95
KTH37	Si/SiO2	Graphene	≈10 µA	0.065	0.065
UCLA38	Si/TmSiO/TiO2	Graphene	≈50 µA	≈0.78	0.44
KTH39	GaN/AlN	Graphene	4 A	0.4	≈0.28
MIT40	GaN/AlN/GaN	Graphene	≈50 A	4–6	0.75
NCKU41	MoS2	WSe2	0.004	2
This work	GaTe	MoS2	70 A	7	0.95