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. 2018 Mar 19;10(15):13158–13180. doi: 10.1021/acsami.8b00183

Table 1. PEALD Process Conditions for the Materials Deposited with and without Substrate Biasing during Plasma Exposure.

material TiOx TiNx HfOx HfNx SiOx SiNx
precursor TDMATa TDMACpHb BDEASc DSBASd
bubbler temperature (°C) 60 60 50 40
precursor delivery bubbled with 100 sccm Ar bubbled with 100 sccm Ar vapor drawn
stage temperature (°C) 150 and 300 200 150 450 200 500
precursor dose time (ms) 200 200 400 400 175 500
precursor reaction step (s)         1 3
precursor purge time (s) 3 3 2 2 3 2
plasma gas O2 Ar + H2 O2 H2 O2 N2
plasma gas flow (sccm) 100 10 + 40 100 100 100 100
plasma pressure (mTorr) 9 6 15 30 15 11
RF-ICP power (W) 200 100 400 100 200 600
plasma exposure time (s) 10 10 8 10 5 20
plasma purge time (s) 3 4 3 4 2 3
⟨Vbias⟩ or average bias voltage (V) 0 to −254 0 to −255 0 to −280 0 to −210 0 to −295 0 to −103
bias during plasma all 10 s, last 5 s last 5 s last 4 s all 10 s, last 5 s all 5 s last 10 s
a

TDMAT – Ti(NMe2)4.

b

TDMACpH – CpHf(NMe2)3.

c

BDEAS – SiH2(NEt2)2.

d

DSBAS – SiH3N(sBu)2.