Table 2. GPC (Film Thickness Per Cycle and Number of Atoms Deposited per nm2 per Cycle) and Elemental Composition of Titanium Oxide Films Deposited at 300 °C with and without Bias Voltages Applied during the O2 Plasma Exposure Stepa.
| RBS |
ERD | ||||||
|---|---|---|---|---|---|---|---|
| ⟨Vbias⟩ (V) | bias duration during 10 s O2 plasma step (s) | GPC (Å/cycle) | GPC [Ti] (# Ti at. per nm2 per cycle) | GPC [O] (# O at. per nm2 per cycle) | O/Ti | [C] at. % | [H] at. % |
| 0 | no bias | 0.48 ± 0.02 | 1.35 ± 0.03 | 2.72 ± 0.05 | 2.0 ± 0.1 | <d.l.b | 3 ± 7 |
| –152 | all 10 | 0.61 | 1.62 | 3.47 | 2.2 | <d.l. | 3 |
| last 5 | 0.55 | 1.50 | 3.07 | 2.0 | <d.l. | 3 | |
| –205 | all 10 | 0.70 | 1.71 | 3.85 | 2.3 | <d.l. | 3 |
| last 5 | 0.60 | 1.61 | 3.67 | 2.3 | <d.l. | 3 | |
a
For the films deposited with biasing during plasma exposure, data are shown for average bias voltages, ⟨Vbias⟩, applied during the whole (10 s) and the last half (5 s) of the 10 s O2 plasma step. Typical uncertainties are given in the first row.
b
Values below detection limit (d.l.) of 8 at. % for [C].