Table 3. GPC (Film Thickness per Cycle and Number of Atoms Deposited per nm² per Cycle) and Elemental Composition of Titanium Nitride Films Deposited at 200 °C with and without Average Bias Voltages, ⟨V_bias⟩, Applied during the Ar + H₂ Plasma Exposure Step^a.

		RBS							ERD
⟨Vbias⟩	GPC	GPC [Ti] (# Ti at. per	GPC [N] (# N at. per	GPC [O] (# O at. per		[O]	[C]	[Ar]	[H]
(V)	(Å/cycle)	nm2 per cycle)	nm2 per cycle)	nm2 per cycle)	N/Ti	at. %	at. %	at. %	at. %
0	0.47 ± 0.02	1.22 ± 0.03	0.76 ± 0.10	0.92 ± 0.05	0.63 ± 0.06	28 ± 5	<d.l.b	0 ± 0.06	10 ± 7
–130	0.35	1.46 ± 0.01	1.18 ± 0.04	0.10 ± 0.02	0.80 ± 0.02	3 ± 2	<d.l.	0.20 ± 0.05	3 ± 3
–255	0.34	1.18	1.17	0.06	1.0	2	12 ± 3	0.77	2

^aTypical uncertainties are given in the first and second rows unless otherwise stated.

^bValues below detection limit (d.l.) of 8 at. % for [C].