Table 4. GPC (Film Thickness Per Cycle and Number of Atoms Deposited per nm² per Cycle) and Elemental Composition of Silicon Nitride Films Deposited at 500 °C with and without Average Bias Voltages, ⟨V_bias⟩, Applied during the N₂ Plasma Exposure Step^a.

		RBS					ERD
⟨Vbias⟩	GPC	GPC [Si]	GPC [N]		[O]	[C]	[H]
(V)	(Å/cycle)	(# Si at. per nm2 per cycle)	(# N at. per nm2 per cycle)	N/Si	at. %	at. %	at. %
0	0.14 ± 0.02	0.55 ± 0.02	0.79 ± 0.04	1.4 ± 0.1	2 ± 2	<d.l.b	4 ± 3
–103	0.21	0.53	0.91	1.7	10	8 ± 3	6

^aTypical uncertainties are given in the first row unless otherwise stated.

^bValues below detection limit (d.l.) of 8 at. % for [C].