Table 5. Thickness Uniformity of Films Deposited on 200 mm Planar c-Si Wafers without and with Average Bias Voltages, ⟨Vbias⟩, Applied during Plasma Exposure Steps.
| No substrate bias (%) | With substrate bias (%) | ⟨Vbias⟩ (V) | |
|---|---|---|---|
| titanium oxide | 2.3 | 2.8a, 2.0b | –205 |
| hafnium oxide | 4.6 | 4.6 | –152 |
| silicon oxide | 1.1 | 0.7 | –200 |
| titanium nitride | 7.5 | 6.6 | –187 |
| hafnium nitride | 9.4 | 7.7a, 6.7b | –210 |
| silicon nitride | 3.5 | 3.6 | –103 |
a
Substrate biasing applied for the entire duration of the plasma exposure step.
b
Substrate biasing applied for the last half of the plasma exposure step.