. 2018 Mar 19;10(15):13158–13180. doi: 10.1021/acsami.8b00183

Table 6. Wet-Etch Rates of Silicon Nitride on 3D Trench Nanostructures (AR = 4.5:1) for Films Deposited at 500 °C without (⟨V_bias⟩ = 0 V) and with Substrate Biasing (⟨V_bias⟩ = −103 V) Applied during N₂ Plasma Exposure^a.

	wet-etch rate (nm/min)
⟨V_bias⟩ (V)	top	bottom-side	bottom
0	0 ± 1	3 ± 1	1 ± 1
–103	completely etched	2 ± 1	completely etched

The wet-etch rates are reported for silicon nitride films located at planar (top, bottom) and vertical (bottom-side) regions of the 3D substrate topographies after 30 s dip in an etchant solution of dilute hydrofluoric acid (HF:H₂O = 1:100). Typical uncertainties are given in the first row.

Table 6. Wet-Etch Rates of Silicon Nitride on 3D Trench Nanostructures (AR = 4.5:1) for Films Deposited at 500 °C without (⟨Vbias⟩ = 0 V) and with Substrate Biasing (⟨Vbias⟩ = −103 V) Applied during N2 Plasma Exposurea.

Table 6. Wet-Etch Rates of Silicon Nitride on 3D Trench Nanostructures (AR = 4.5:1) for Films Deposited at 500 °C without (⟨V_bias⟩ = 0 V) and with Substrate Biasing (⟨V_bias⟩ = −103 V) Applied during N₂ Plasma Exposure^a.