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. 2018 Apr 25;9:1652. doi: 10.1038/s41467-018-04099-7

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — Photo-response of HfS₂/HfO₂ engineered device. a SPCM map of the device before (top) and after (bottom) laser-assisted oxidation. V_sd = −5 V, V_bg = 50 V, λ = 473 nm, P = 150 W cm⁻² and 0.5 μm step size. Inset: optical micrograph of the device, after laser-assisted oxidation of a single spot (green dashed circle). Scale bars are 3 μm. b Responsivity before (blue, $ℜ_{0}$ ) and after (red, $ℜ$ ) laser-assisted oxidation as a function of incident optical power. Inset: ratio $ℜ ∕ ℜ_{0}$