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. 2018 Apr 25;8:6520. doi: 10.1038/s41598-018-24736-x

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Field-induced enhancement of T_c at low in-plane field and high temperature. (a,b) The temperature dependence of the 5.5 nm WTe₂ Sample 1 (T_c 0.71 K) film sheet resistance, ρ, at fixed fields. The black arrow marks the direction of the increase of in-plane magnetic fields. In Panel a, the superconducting transition shifts to higher T as the in-plane field increases to 2 T, whereas at higher field, the transition shifts to lower T. Combining panel a and b shows the transition temperature T_c gets enhanced at the finite in-plane magnetic field. (c) The magnetic field H dependence of 5.5 nm WTe₂ film Sample 1. At around T_c, this sample shows strong negative magnetoresistance. (d) Similar negative magnetic field H dependence of R is observed in 5.5 nm WTe₂ film Sample 2 (T_c 0.64 K). (e) The temperature dependence of in-plane upper critical field for 5.5 nm WTe₂ thin film around T = T_c. Field-induced enhancement of T_c shows a maximum of 0.8% in sample 1 (H_p = 1.31 T) and 1.6% in sample 2 (H_p = 1.21 T).