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. 2018 Apr 27;9:1707. doi: 10.1038/s41467-018-04067-1

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© The Author(s) 2018

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — Surface selectivity of InGaN photochemical diode for Rh-nanoparticle deposition. Comparison of STEM-SE and EDXS elemental mapping on two different surfaces of InGaN nanosheet (decorated with Rh-nanoparticles) shows that a very few Rh nanoparticles were deposited on the anode (outer) surface, whereas b significantly large number of Rh-nanoparticles get deposited on the cathode (inner) surface. Scale bars, 400 nm. HRSTEM-BF lattice fringe image from InGaN photochemical diode nanosheet, illustrating c defect-free single crystalline In_0.22Ga_0.78N anode surface, and d Rh nanoparticles on the crystalline cathode surface of photochemical diode. Scale bars, 5 nm. A radial density filter was used for Fig. 2c