(A) Exemplar whole-cell MA current traces recorded in HEK293TΔP1 cells in response to mechanical indentation with a glass probe at Ehold = −80 mV. Arrow indicates the position of persistent post-stimulus MA current measurement.
(B) Peak MA current measured at different indentation depths in HEK293TΔP1 cells expressing indicated constructs (Ehold = −80 mV). Data shown as mean ± SEM.
(C and D) Quantification of MA current activation threshold (C) and inactivation rate τinact (D). NS, not significant; p > 0.05, **p < 0.01; unpaired t test (C) and Mann-Whitney U-test (D). Data shown as mean ± SEM.
(E) Post-stimulus MA current amplitude at different indentation depths. ****p < 0.0001 for expression construct effect, two-way ANOVA. Data shown as mean ± SEM.
(F) Quantification of peak-normalized amplitude of persistent post-stimulus MA current. ****p < 0.0001, Mann-Whitney U test. Data shown as mean ± SEM.
See also Figure S2A.